Semiconductor device including two groove-shaped patterns that include two bent portions

摘要

The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

主权项

1. A semiconductor device comprising:
a first insulating film formed above a substrate; a first conductive layer formed in the first insulating film; a second insulating film formed above the first insulating film with the first conductive layer; two groove-shaped patterns formed in the second insulating film, each of the groove-shaped patterns including two bent portions with an angle that is larger than 90 degree in a plan view; and a second conductive layer formed in the groove-shaped patterns, the second conductive layer electrically coupling to the first conductive layer.