Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device having a twin well structure is provided. The method includes ion-implanting of a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first resist pattern to cover the first region of the semiconductor substrate and to expose the second region of the semiconductor substrate; ion-implanting of a second conductivity type impurity at a higher concentration compared to the first conductivity type impurity in the second region of the semiconductor substrate, with the first resist pattern being used as a mask; and thermal-diffusing the first conductivity type of impurity and the second conductivity type of impurity.

主权项

1. A method of manufacturing a semiconductor device having a twin well structure, comprising:
ion-implanting a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first mask pattern to cover the first region of the semiconductor substrate and to expose the second region of the semiconductor substrate; ion-implanting a second conductivity type impurity at a higher concentration compared to the first conductivity type impurity in the second region of the semiconductor substrate, using the first mask pattern as a mask; thermal-diffusing the first conductivity type of impurity and the second conductivity type of impurity; and forming an ink supply port passing through the second region of the semiconductor substrate.