Semiconductor device and manufacturing method thereof

摘要

A semiconductor device is provided which includes an N-type semiconductor layer and a P-type semiconductor layer coexisting in the same wiring layer without influences on the properties of a semiconductor layer. The semiconductor device includes a first wiring layer with a first wiring, a second wiring layer with a second wiring, and first and second transistors provided in the first and second wiring layers. The first transistor includes a first gate electrode, a first gate insulating film, a first oxide semiconductor layer, a first hard mask layer, and first insulating sidewall films covering the sides of the first oxide semiconductor layer. The second transistor includes a second gate electrode, a second gate insulating film, a second oxide semiconductor layer, and a second hard mask layer.

主权项

1. A semiconductor device, comprising:
a first wiring layer including a first interlayer insulating layer, and a first wiring embedded in the first interlayer insulating layer; a second wiring layer including a cap insulating layer formed over the first wiring layer, a second interlayer insulating layer provided over the cap insulating layer, and a second wiring embedded in the second interlayer insulating layer; a first transistor of a first conductive type provided in the first wiring layer and the second wiring layer; a second transistor of a second conductive type other than the first conductive type provided in the first wiring layer and the second wiring layer, wherein the first transistor includes: a first gate electrode as one first wiring; a first gate insulating film provided over the first gate electrode and including a part of the cap insulating layer; a first oxide semiconductor layer formed over the first gate insulating film; a first hard mask layer provided over the first oxide semiconductor layer; and a first insulating sidewall film covering a side of the first oxide semiconductor layer, wherein the second transistor includes: a second gate electrode as another first wiring; a second gate insulating film provided over the second gate electrode to lead to the first gate insulating film, and including another part of the cap insulating layer; a second oxide semiconductor layer provided over the second gate insulating film; and a second hard mask layer provided over the second oxide semiconductor layer.