Backside CMOS compatible BioFET with no plasma induced damage

摘要

The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

主权项

1. A device, comprising:
a carrier substrate; a first BioFET device attached to the carrier substrate, the first BioFET device including:
a gate structure on a first side of a semiconductor substrate;a source region and a drain region in the semiconductor substrate adjacent to the gate structure;a channel region interposing the source and drain regions and underlying the gate structure;a sensing film directly on and covering at least a portion of the channel region on a second side of the semiconductor substrate; and a microfluidic channel or microfluidic well disposed over the sensing film.