Manufacturing method of semiconductor apparatus

摘要

A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first element part and the first insulator layer, from a side of a first semiconductor layer toward the first conductor layer, and forming a second hole, which penetrates through the first element part, the first wiring part, and a second insulator layer, from the side toward the second conductor layer, an etching condition of the first insulator layer when the first hole is formed is that an etching rate for the material of the first insulator layer under the etching condition is higher than an etching rate for the material of the intermediate layer under the etching condition.

主权项

1. A manufacturing method of a semiconductor apparatus, comprising:
preparing a laminated body including: a first element part having a first semiconductor layer; a first wiring part having a first conductor layer, and a first insulator layer located between the first semiconductor layer and the first conductor layer; a second element part including a second semiconductor layer; and a second wiring part including a second conductor layer, wherein the second wiring part is located between the first element part and the second element part, wherein the first wiring part is located between the first element part and the second wiring part, and wherein a second insulator layer is located between the first conductor layer and the second conductor layer; forming a first hole, which penetrates through the first element part and the first insulator layer, from a side of the first semiconductor layer toward the first conductor layer, and forming a second hole, which penetrates through the first element part, the first wiring part, and the second insulator layer, from the side of the first semiconductor layer toward the second conductor layer; and forming a conductive member configured to electrically connect the first conductor layer with the second conductor layer, in the first hole and the second hole, wherein the first wiring part has an intermediate layer made of a material different from materials of the first insulator layer and the first conductor layer and located between the first insulator layer and the first conductor layer, and wherein an etching condition of the first insulator layer when the first hole is formed is that an etching rate for the material of the first insulator layer under the etching condition is higher than an etching rate for the material of the intermediate layer under the etching condition, wherein the second insulator layer is etched in the forming of the second hole, in a state where the first hole reaches the intermediate layer and the intermediate layer remains between the first hole and the first conductor layer.