发明名称 Methods and apparatus of packaging semiconductor devices
摘要 Methods and apparatus are disclosed which reduce the stress concentration at the redistribution layers (RDLs) of a package device. A package device may comprise a seed layer above a passivation layer, covering an opening of the passivation layer, and covering and in contact with a contact pad. A RDL is formed above the passivation layer, above and in contact with the seed layer, covering the opening of the passivation layer, and electrically connected to the contact pad through the seed layer. The RDL has an end portion with a surface that is smooth without a right angle. The surface of the end portion of the RDL may have an obtuse angle, or a curved surface.
申请公布号 US9082870(B2) 申请公布日期 2015.07.14
申请号 US201313900754 申请日期 2013.05.23
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lu Chun-Lin;Chen Hsien-Wei;Wu Kai-Chiang;Kuo Hung-Jui
分类号 H01L23/00;H01L23/31;H01L23/525;H01L23/532 主分类号 H01L23/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method for forming a package device comprising: providing a substrate with a contact pad on a surface of the substrate; forming a dielectric layer on the surface of the substrate with an opening exposing the contact pad; forming a seed layer above the dielectric layer, covering the opening of the dielectric layer, covering and in contact with the contact pad; forming a photoresist layer above the seed layer, with a photoresist material comprising photo active compound (PAC); forming a photoresist pattern above the seed layer covering two ends of the seed layer; forming a conductive layer in an area not covering by the photoresist pattern above and in contact with the seed layer, covering the opening of the dielectric layer, and electrically connected to the contact pad through the seed layer, wherein the conductive layer has an end portion next to the photoresist pattern, and the end portion of the conductive layer has a top surface that is smooth without a right angle; and removing the photoresist pattern.
地址 Hsin-Chu TW