| 发明名称 | III-V device and method for manufacturing thereof | ||
| 摘要 | The disclosure relates to a method for manufacturing a III-V device and the III-V device obtained therefrom. The method comprises providing a semiconductor substrate including at least a recess area and forming a buffer layer overlying the semiconductor substrate in the recess area. The buffer layer includes a binary III-V compound formed at a first growth temperature by selective epitaxial growth from a group III precursor and a group V precursor in the presence of a carrier gas. The first growth temperature is equal or slightly higher than a cracking temperature of each of the group III precursor and of the group V precursor. | ||
| 申请公布号 | US9082616(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201414279033 | 申请日期 | 2014.05.15 |
| 申请人 | IMEC | 发明人 | Merckling Clement |
| 分类号 | H01L21/331;H01L21/4763;H01L29/06;H01L31/0336;H01L21/02;H01L29/20 | 主分类号 | H01L21/331 |
| 代理机构 | McDonnell Boehnen Hulbert & Berghoff LLP | 代理人 | McDonnell Boehnen Hulbert & Berghoff LLP |
| 主权项 | 1. A method for manufacturing a III-V device comprising: providing a semiconductor substrate including at least a recess area; and forming a buffer layer overlying the semiconductor substrate in the recess area, wherein the buffer layer includes a binary III-V compound formed at a first growth temperature by selective epitaxial growth from a group III precursor and a group V precursor in the presence of a carrier gas, and wherein the first growth temperature is lower or equal to 350° C. | ||
| 地址 | Leuven BE | ||