Set pulse for phase change memory programming

摘要

A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a first value and subsequently decreasing the signal value. The phase change memory cell can be substantially crystallized after the decrease in signal value.

主权项

1. A method comprising:
melting phase change material of a phase change memory (PCM) cell by applying an electronic signal at a first signal value to a heater of the PCM cell; subsequently ramping down a signal value of the electronic signal from the first signal value to a second signal value, where ramping down occurs at a first ramp-down rate; and ramping down the signal value of the electronic signal from the second signal value to a third signal at a second ramp-down rate, wherein the second ramp-down rate is different from the first ramp-down rate; wherein the melted phase change material is substantially crystallized after reaching the second signal value.