| 摘要 |
<p>Provided is a non-volatile memory device having a vertical structure which improves reliability and obtain high density by solving a oxygen distribution problem of a channel hole size which makes a channel structure formed in a non-volatile memory device of the vertical structure in the present invention. The non-volatile memory device comprises: a substrate; a channel structure to be extended from the substrate in a first direction which is perpendicular to a main surface of the substrate; multiple memory cell stacks including a plurality of a ground selection line, a plurality of word lines, and a string selection line formed successively to be spaced apart from each other on a side of the channel structure along with the first direction; and a common source area formed on a first surface of the substrate and between the multiple memory cell stacks. The substrate has a recess area thereon which has a second surface lower than a first level of a first surface of the substrate as a lower surface.</p> |
