Passivated upstanding nanostructures and methods of making the same

摘要

Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

主权项

1. A device comprising:
a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor of a first type, a first layer comprising a lightly doped amorphous semiconductor or an intrinsic amorphous semiconductor, and a second layer comprising a heavily doped amorphous semiconductor layer of a second type opposite from the first type, wherein the first layer is disposed on the core and the second layer is disposed on the first layer; wherein the first layer passivates at least a surface of the core; wherein the first layer is disposed on an end surface of the core away from the substrate; wherein an entirety of the first layer and an entirety of the second layer are coextensive with the core in at least a direction parallel to the substrate.