发明名称 |
Multi-die integrated circuit structure with heat sink |
摘要 |
An integrated circuit structure can include a first die including a first surface and a second surface and a second die including a first surface and a second surface. The first surface of the first die can be coupled to the second surface of the second die. The integrated circuit structure also can include a heat sink coupled to the first surface of the first die and the first surface of the second die. |
申请公布号 |
US9082633(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201113272500 |
申请日期 |
2011.10.13 |
申请人 |
XILINX, INC. |
发明人 |
Grant Douglas M. |
分类号 |
H01L23/34;H01L29/40;H01L25/065;H01L23/367;H01L23/433;H01L23/40;H01L23/552 |
主分类号 |
H01L23/34 |
代理机构 |
|
代理人 |
Cuenot Kevin T.;Maunu LeRoy D. |
主权项 |
1. An integrated circuit structure, comprising:
a first die comprising a first surface and a second surface; a second die comprising a first surface and a second surface; wherein the first die and the second die are semiconductor dice; wherein the second die is mounted on the first die with the second surface of the second die facing the first surface of the first die; and a heat sink mounted on the first surface of the first die and the first surface of the second die; wherein the first die is an interposer and comprises a first thermal wire coupled to the heat sink; wherein the first thermal wire is not configured to propagate an electrical signal; wherein the first thermal wire comprises a first portion formed of a via coupled to the heat sink and extending from the first surface of the interposer and into the interposer and a second portion formed of a first interconnect layer within the interposer that is parallel to the surface of the interposer and perpendicular to the via; and wherein the second die comprises a second thermal wire coupled to the heat sink, and the second thermal wire comprises a first portion formed of a via coupled to the heat sink and extending from the first surface of the second die and into the second die and a second portion formed of an interconnect layer of the second die that is parallel to the surface of the interposer and perpendicular to the via of the second thermal wire. |
地址 |
San Jose CA US |