Integrated circuit and fabricating method thereof

摘要

An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a semiconductor substrate, at least one deep n-well in the semiconductor substrate, at least one p-channel metal-oxide-semiconductor transistor in the deep n-well, at least one n-channel metal-oxide-semiconductor transistor outside of the deep n-well, an first interconnect structure, and a protection component. Both of the p-channel metal-oxide-semiconductor transistor and the n-channel metal-oxide-semiconductor transistor are disposed in the semiconductor substrate, and are electrically coupled by the first interconnect structure. The protection component is disposed in the semiconductor substrate, wherein the protection component is electrically coupled to the deep n-well.

主权项

1. An integrated circuit, comprising:
a semiconductor substrate; at least one deep n-well disposed in the semiconductor substrate; at least one p-channel metal-oxide-semiconductor transistor disposed in the deep n-well; at least one n-channel metal-oxide-semiconductor transistor disposed in the semiconductor substrate and outside of the deep n-well; a first interconnect structure electrically coupled to the n-channel metal-oxide-semiconductor transistor and the p-channel metal-oxide-semiconductor transistor; and a protection component disposed in the semiconductor substrate and outside of the deep n-well, wherein the protection component is electrically coupled to the deep n-well, and the protection component and the n-channel metal-oxide-semiconductor transistor being at opposite sides of the deep n-well.