发明名称 MEMS device with stress isolation and method of fabrication
摘要 A MEMS device (20) includes a proof mass structure (26) and beams (28, 30) residing in a central opening (32) of the proof mass structure (26), where the structure and the beams are suspended over a substrate (22). The beams (28, 30) are oriented such that lengthwise edges (34, 36) of the beams are beside one another. Isolation segments (38) are interposed between the beams (28, 30) such that a middle portion (40) of each of the beams is laterally anchored to adjacent isolation segments (38). The isolation segments (38) provide electrical isolation between the beams. The beams (28, 30) are anchored to the substrate (22) via compliant structures (61, 65) that isolate the beams from deformations in the underlying substrate. The compliant structures (61, 65) provide electrically conductive paths (96, 98) to the substrate (22) for the beams (28, 30) where the paths are electrically isolated from one another.
申请公布号 US9079763(B2) 申请公布日期 2015.07.14
申请号 US201313867656 申请日期 2013.04.22
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Geisberger Aaron A.
分类号 B81B3/00;B81C1/00 主分类号 B81B3/00
代理机构 代理人
主权项 1. A microelectromechanical systems (MEMS) device comprising: a substrate; a device structure suspended over a surface of said substrate, said device structure including a proof mass structure, a first beam, and a second beam, said first and second beams being oriented such that lengthwise edges of said first and second beams are beside one another; and at least one isolation segment suspended over said surface and interposed between said first and second beams, wherein a middle portion of each of said first and second beams is laterally anchored to said at least one isolation segment, and said at least one isolation segment provides electrical isolation between said first and second beams.
地址 Austin TX US