发明名称 Célula de memória e método para formar junção de túnel magnético (mtj) de uma memória
摘要 <p>A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.</p>
申请公布号 BRPI0907208(A2) 申请公布日期 2015.07.14
申请号 BR2009PI07208 申请日期 2009.01.08
申请人 QUALCOMM INCORPORATED 发明人 SIQUN GU;SEUNG H. KANG;MATTHEW M. NORWAK
分类号 H01L43/08 主分类号 H01L43/08
代理机构 代理人
主权项
地址