发明名称 High-frequency switch module
摘要 A high-frequency switch module includes a switch element, high-frequency circuits, and a GND circuit. The switch element includes an antenna port, switch ports, and an FET switch. The FET switch switches connection between the switch ports and the antenna port. The high-frequency circuits connect any of the switch ports to a signal processing circuit. In the GND circuit, the switch port, which is not connected to the high-frequency circuits, is directly connected to a GND electrode.
申请公布号 US9083394(B2) 申请公布日期 2015.07.14
申请号 US201113036029 申请日期 2011.02.28
申请人 Murata Manufacturing Co., Ltd. 发明人 Uejima Takanori;Watanabe Shinya
分类号 H03K17/00;H04B1/00;H04B1/48 主分类号 H03K17/00
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A high-frequency switch module comprising: a ceramic multilayer substrate including a plurality of dielectric layers and a plurality of wiring electrodes that are alternately arranged; a switch element including an antenna port connected to an antenna through which a communication signal is transmitted and received, a plurality of switch ports that is alternatively selected for connection to the antenna port, and a FET switch arranged to switch the connection between the switch ports and the antenna port; a high-frequency circuit arranged to connect any of the plurality of switch ports to a communication-signal processing circuit processing the communication signal; and a GND circuit including at least one free switch port among the plurality of switch ports, to which the high-frequency circuit is not connected, the at least one free switch port being connected to a GND electrode directly or via an impedance unit including a circuit element in the GND circuit; wherein in the FET switch, the at least one free switch port is temporarily connected to the antenna port during switching of the connection between the switch ports and the antenna port; the switch element, the high-frequency circuit, and the GND circuit are integrally disposed on or in the ceramic multilayer substrate; the GND electrode is disposed on a surface of one of the plurality of dielectric layers different from a surface on which the switch element is mounted; and the at least one free switch port is connected to the GND electrode through a via hole electrode in the GND circuit.
地址 Kyoto JP