Variable resistive memory device including vertical channel PMOS transistor and method of manufacturing the same

摘要

A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar. The inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar.

主权项

1. A semiconductor device, comprising:
a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion; a drain formed in an upper outer portion of the vertical pillar; a source formed in a lower outer portion of the vertical pillar; and a gate formed to surround the vertical pillar, wherein the inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar and the inner portion is subjected to a compressed stress based on a junction with the drain and source which are formed in the outer portion of the vertical pillar.