发明名称 Method for manufacturing semiconductor device
摘要 The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
申请公布号 US9082679(B2) 申请公布日期 2015.07.14
申请号 US201414450967 申请日期 2014.08.04
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Jinbo Yasuhiro;Morisue Masafumi;Kimura Hajime;Yamazaki Shunpei
分类号 H01L29/18;H01L33/00;H01L27/15;H01L27/12;H01L33/62 主分类号 H01L29/18
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A backlight module comprising: a substrate; a first light-emitting diode provided over the substrate; a second light-emitting diode provided over the substrate; a common conductive layer over the substrate; and a wiring layer, wherein a first terminal of the first light-emitting diode and a first terminal of the second light-emitting diode are electrically connected to the common conductive layer, wherein a second terminal of the first light-emitting diode is electrically connected to a second terminal of the second light-emitting diode through the wiring layer, wherein the first light-emitting diode and the second light-emitting diode are configured to emit light of a same color, and wherein an interval between the first light-emitting diode and the second light-emitting diode is more than twice as large as a thickness of each of the first light-emitting diode and the second light-emitting diode.
地址 Atsugi-shi, Kanagawa-ken JP