| 发明名称 | Shear stress sensors | ||
| 摘要 | This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten. | ||
| 申请公布号 | US9080907(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US200812739520 | 申请日期 | 2008.10.24 |
| 申请人 | Cambridge Enterprise Limited | 发明人 | Haneef Ibraheem;Hodson Howard P.;Miller Robert;Udrea Florin |
| 分类号 | G01F1/68;G01F1/684;G01F1/708;G01N3/24 | 主分类号 | G01F1/68 |
| 代理机构 | Loginov & Associates, PLLC | 代理人 | Loginov & Associates, PLLC ;Loginov William A. |
| 主权项 | 1. A hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, wherein said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal and wherein said sensor is fabricated by a CMOS process, wherein said silicon substrate is of a silicon on insulator (SOI) type, wherein said film of metal comprises a plurality of stacked metal layers. | ||
| 地址 | Cambridge, Cambridgeshire GB | ||