萧特基位障二极体及其制造方法,申请号TW101111245-传众专利搜索

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发明名称	萧特基位障二极体及其制造方法
摘要
申请公布号	TWI492311	申请公布日期	2015.07.11
申请号	TW101111245	申请日期	2012.03.30
申请人	立錡科技股份有限公司	发明人	管杰雄;廖庭维;邱建维;黄宗义
分类号	H01L21/329;H01L29/872	主分类号	H01L21/329
代理机构		代理人	任秀妍新竹市光复路2段481号9楼
主权项	一种萧特基位障二极体(Schottky barrier diode,SBD)，包含：一半导体层，具有复数开口，以形成一开口矩阵；以及一阳极，具有形成于该复数开口中之复数导电突出部，以形成一导电矩阵；其中，该半导体层与该阳极间，形成萧特基接触；其中该复数开口由该半导体层一上表面向下，利用一微影制程与一蚀刻制程所形成之奈米洞结构。
地址	新竹县竹北市台元街20号5楼

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