POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes an active region in which a current flows through a channel formed in an on-operation, an end region which is formed around the active region, a first semiconductor region of a first conductive type which is formed on the end region and is extended long from the active region to the end region, and a second semiconductor region of a second conductive type which is formed on the end region, is extended long from the active region, and is formed by alternating with the first semiconductor region.