A TUNABLE REFERENCE CIRCUIT COMPRISING MAGNETIC TUNNEL JUNCTION ELEMENTS FOR A SEMICONDUCTOR MEMORY CIRCUIT

摘要

A circuit includes a first reference pair that includes a first path and a second path. The first path includes a first magnetic tunnel junction (MTJ) element and the second path includes a second MTJ element. The circuit further includes a second reference pair that includes a third path and a fourth path. The third path includes a third MTJ element and the fourth path includes a fourth MTJ element. The first reference pair and the second reference pair are tied together in parallel. A reference resistance of the circuit is based on a resistance of each of the first second third and fourth MTJ elements. The reference resistance of the circuit is adjustable by adjusting a resistance of one of the MTJ elements.