| 摘要 |
<p>The present invention discloses a reflective infrared light emitting diode and a manufacturing method thereof. The manufacturing method of the present invention is capable of growing a transparent conductive layer on a surface of a substrate; growing a light emitting diode structure layer, including an active layer, on a surface of the transparent conductive layer; sequentially depositing a reflective layer, a transparent conductive film, and an eutectic mixture layer on a surface of the light emitting diode structure layer; and forming an upper electrode on the other surface of the transparent conductive layer after removing the substrate. Therefore, the reflective infrared light emitting diode is able to be manufactured without wafer bonding by providing a structure for discharging most of the light, discharged from the active layer, to an upper part and a side.</p> |
