| 摘要 |
<p>The combination has a positive-channel metal oxide semiconductor (PMOS) type active charge or current mirrors formed of two extended drain PMOS transistors (200, 201) whose gates are connected together and sources are connected to a high voltage supply (VDDHV), and where drains of the PMOS transistors constitute current inputs and outputs. Gates of two standard PMOS transistors are connected with each other. Another extended drain PMOS transistor limits maximum voltage between drain and source terminals of one standard PMOS transistor.</p> |
