发明名称 Valley-Fill Power Factor Correction Circuit with Active Conduction Angle Control
摘要 A valley-fill circuit with active conduction angle control allows use of a single storage capacitor instead of two. The capacitor is charged to the maximum voltage of the AC cycle, which makes possible use of low-capacitance high-voltage low ESR capacitors, increases energy storage density and decreases circuit footprint. This makes it feasible to use ceramic capacitors, such as a multilayer ceramic (MLCC), polyethylene, polypropylene, or any suitable capacitor type in addition to electrolytic capacitors. This improves the operational longevity and reduces the footprint of the circuitry.
申请公布号 US2015194883(A1) 申请公布日期 2015.07.09
申请号 US201514590944 申请日期 2015.01.06
申请人 Touzelbaev Maxat 发明人 Touzelbaev Maxat
分类号 H02M3/156;H05B33/08 主分类号 H02M3/156
代理机构 代理人
主权项 1. A circuit, which charges a storage capacitor to a peak-to-peak voltage of AC cycle and has means for initiating discharge, which can comprise: a transistor, comprises gate, drain, source, or body electrodes, or any combination of these electrodes; a storage capacitor, coupled between a first node and ground, wherein the storage capacitor is implemented using a ceramic, polyethylene, polypropylene, or any other suitable capacitor type, other than a electrolytic type capacitor, that may be needed for high-reliability operation; a pair of a first diode and a resistance, connected in parallel to each other and in series to a storage capacitor, to control peak charging current of a capacitor and dampen input current oscillations; a second diode switch, which isolates storage capacitor from external power input while output circuit is supplied by the storage capacitor; and a body diode of the transistor, coupled between the drain and source electrodes of the transistor.
地址 San Jose CA US