发明名称 |
FORMULATIONS TO SELECTIVELY ETCH SILICON AND GERMANIUM |
摘要 |
Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates. |
申请公布号 |
WO2015103146(A1) |
申请公布日期 |
2015.07.09 |
申请号 |
WO2014US72571 |
申请日期 |
2014.12.29 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
BILODEAU, STEVEN;COOPER, EMANUEL I. |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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