发明名称 |
SEMICONDUCTOR WAFER MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method which can reduce generation of cracks in semiconductor wafer.SOLUTION: A semiconductor wafer manufacturing method comprises: a process of attaching a semiconductor crystal on a support plate; a process of processing the semiconductor crystal; and a process of heating the support plate, in which a thermal expansion coefficient difference between the support plate and the semiconductor crystal is equal to or less than 40%.</p> |
申请公布号 |
JP2015128150(A) |
申请公布日期 |
2015.07.09 |
申请号 |
JP20140227093 |
申请日期 |
2014.11.07 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
YOSHIZUMI YUSUKE;MATSUMOTO NAOKI;FUJINAGA TOSHIHIRO |
分类号 |
H01L21/304;B23H7/02;B23H7/08;B23H7/10;B23H9/00;B24B27/06 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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