发明名称 SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method which can reduce generation of cracks in semiconductor wafer.SOLUTION: A semiconductor wafer manufacturing method comprises: a process of attaching a semiconductor crystal on a support plate; a process of processing the semiconductor crystal; and a process of heating the support plate, in which a thermal expansion coefficient difference between the support plate and the semiconductor crystal is equal to or less than 40%.</p>
申请公布号 JP2015128150(A) 申请公布日期 2015.07.09
申请号 JP20140227093 申请日期 2014.11.07
申请人 SUMITOMO ELECTRIC IND LTD 发明人 YOSHIZUMI YUSUKE;MATSUMOTO NAOKI;FUJINAGA TOSHIHIRO
分类号 H01L21/304;B23H7/02;B23H7/08;B23H7/10;B23H9/00;B24B27/06 主分类号 H01L21/304
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