发明名称 METHOD FOR FABRICATING SENSOR
摘要 A method for fabricating a sensor, comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode, a pattern of a photodiode, a pattern of a receive electrode, a pattern of a source electrode, a pattern of a drain electrode, a pattern of a data line and a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer, a pattern of a first passivation layer, a pattern of a gate electrode and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.
申请公布号 US2015194461(A1) 申请公布日期 2015.07.09
申请号 US201214123992 申请日期 2012.11.16
申请人 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Li Tiansheng;Jiang Xiaohui;Xu Shaoying;Xie Zhenyu
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method for fabricating a sensor comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode on and electrically contacting the bias line, a pattern of a photodiode on the transparent electrode, a pattern of a receive electrode on the photodiode, a pattern of a source electrode connected to the receive electrode and a pattern of a drain electrode disposed opposed to the source electrode to form a channel, a pattern of a data line connected to the drain electrode and a pattern of an ohmic layer on the source electrode and the drain electrode, by using a second patterning process; forming a pattern of an active layer on the ohmic layer and the channel, a pattern of a first passivation layer on the active layer and overlaying the base substrate, a pattern of a gate electrode on the first passivation layer and above the channel, and a pattern of a gate line connected to the gate electrode, by using a third patterning process.
地址 Beijing CN