发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof. Floating gates surrounding the channel layer are provided between the protrusions. Control gates surrounding the floating gates are stacked along the channel layer. Interlayer insulating layers are interposed between the control gates stacked along the channel layer. A level difference exists between a lateral surface of each of the floating gates, and a lateral surface of each of the protrusions. |
申请公布号 |
US2015194437(A1) |
申请公布日期 |
2015.07.09 |
申请号 |
US201514662194 |
申请日期 |
2015.03.18 |
申请人 |
SK hynix Inc. ;Tohoku University |
发明人 |
SEO Moon-Sik;ENDOH Tetsuo |
分类号 |
H01L27/115;H01L29/66 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Icheon KR |