发明名称 |
HIGH-K/METAL GATE CMOS TRANSISTORS WITH TIN GATES |
摘要 |
In described examples, an integrated circuit is formed with a thick TiN metal gate (146) with a work function greater than 4.85 eV and with a thin TiN metal gate (156) with a work function less than 4.25 eV. An integrated circuit is formed with a replacement gate PMOS TiN metal gate transistor (170) with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor (172) with a workfunction less than 4.25 eV. An integrated circuit is formed with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. |
申请公布号 |
WO2015103412(A1) |
申请公布日期 |
2015.07.09 |
申请号 |
WO2014US73032 |
申请日期 |
2014.12.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED |
发明人 |
NIIMI, HIROAKI;KIRKPATRICK, BRIAN, K. |
分类号 |
H01L21/8238;B82Y40/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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