| 摘要 |
<p>The present invention relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers including a first semiconductor layer having the first conductivity, a second semiconductor layer having the second conductivity different from the first conductivity, and an active layer located between the first semiconductor layer and the second semiconductor layer, and generating light of a first wavelength through recombination of an electron and a hole; a first electrode supplying one of the electron and the hole to a plurality of semiconductor layers; a second electrode supplying the other of the electron and the hole to a plurality of semiconductor layers; a first distribution bragg reflector designed for reflecting light of the first wavelength generated in the active layer; and an interference prevention film having transparency, increasing the distance between the active layer and the first distribution bragg reflector, and reducing interference between light generated from the active layer and light reflected from the first distribution bragg reflector.</p> |
