SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor device includes an impurity region 7 of a first conductivity type between body regions (4, 5) of a second conductivity type and buried insulating layers (8, 9), which are formed in a semiconductor layer 3 of the first conductivity type. The impurity region 7 has an impurity concentration higher than that of the semiconductor layer 3. The body regions (4, 5) have source regions (10, 11). The source-side surfaces (80, 90) and source-side corners (81, 91) of the buried insulating layers (8, 9) are not covered by a drift region 6, but exposed to the semiconductor layer 3.

主权项

1. A semiconductor device comprising:
a semiconductor layer of a first conductivity type; a body region of a second conductivity type formed in the semiconductor layer; a source region of the first conductivity type formed in the body region; a drift region of the first conductivity type formed in the surface of the semiconductor layer and away from the body region; a buried insulating layer formed in the surface of the semiconductor layer and away from the body region, wherein a first corner on the body region side of the buried insulating layer touches the semiconductor layer and a second corner on the far side from the body region touches the drift region; a gate insulating layer formed on the surface of the semiconductor layer and between the source region and the buried insulating layer; a gate electrode formed on the gate insulating layer; an impurity region of the first conductivity type formed between the body region and the buried insulating layer and away from the buried insulating layer in the semiconductor layer, the impurity region having an impurity concentration higher than that of the semiconductor layer; and a drain region of the first conductivity type formed in the drift region and touching the side surface on the far side of the buried insulating layer from the body region.