| 发明名称 |
SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION |
| 摘要 |
A method of forming a semiconductor fin of a FinFET device includes conformally depositing an amorphous or polycrystalline thin film of silicon-germanium (SiGe) on the semiconductor fin. The method also includes oxidizing the amorphous or polycrystalline thin film to diffuse germanium from the amorphous or polycrystalline thin film into the semiconductor fin. Such a method further includes removing an oxidized portion of the amorphous or polycrystalline thin film. |
| 申请公布号 |
US2015194525(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414269981 |
申请日期 |
2014.05.05 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
XU Jeffrey Junhao;MACHKAOUTSAN Vladimir;RIM Kern;SONG Stanley Seungchul;YEAP Choh Fei |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor fin of a FinFET device, comprising:
conformally depositing an amorphous or polycrystalline thin film of silicon-germanium (SiGe) on the semiconductor fin; oxidizing the amorphous or polycrystalline thin film to diffuse germanium from the amorphous or polycrystalline thin film into the semiconductor fin; and removing an oxidized portion of the amorphous or polycrystalline thin film. |
| 地址 |
San Diego CA US |
