发明名称 SEMICONDUCTOR DEVICE, OR CRYSTAL
摘要 There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.
申请公布号 US2015194479(A1) 申请公布日期 2015.07.09
申请号 US201314233699 申请日期 2013.09.24
申请人 FLOSFIA INC. 发明人 Kaneko Kentaro;Hitora Toshimi;Hirao Takashi
分类号 H01L29/04;H01L21/02;H01L29/24 主分类号 H01L29/04
代理机构 代理人
主权项 1. A semiconductor device or a crystal comprising: a base substrate; a semiconductor layer; and an insulating film, wherein the semiconductor layer and the insulating film are disposed on the base substrate in this order or in an order reverse to this order, and all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure.
地址 Kyoto-shi JP