| 发明名称 |
3DIC Seal Ring Structure and Methods of Forming Same |
| 摘要 |
A semiconductor device includes a first semiconductor chip including a first substrate, a plurality of first dielectric layers and a plurality of conductive lines formed in the first dielectric layers over the first substrate. The semiconductor device further includes a second semiconductor chip having a surface bonded to a first surface of the first semiconductor chip, the second semiconductor chip including a second substrate, a plurality of second dielectric layers and a plurality of second conductive lines formed in the second dielectric layers over the second substrate. The semiconductor device further includes a first conductive feature extending from the first semiconductor chip to one of the plurality of second conductive lines, and a first seal ring structure extending from the first semiconductor chip to the second semiconductor chip. |
| 申请公布号 |
US2015194455(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414151285 |
申请日期 |
2014.01.09 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Ho Cheng-Ying;Chen Pao-Tung;Wang Wen-De;Liu Jen-Cheng;Yaung Dun-Nian |
| 分类号 |
H01L27/146;H01L23/58 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first semiconductor chip comprising a first substrate, a plurality of first dielectric layers and a plurality of conductive lines formed in the first dielectric layers over the first substrate; a second semiconductor chip having a surface bonded to a first surface of the first semiconductor chip, the second semiconductor chip comprising a second substrate, a plurality of second dielectric layers and a plurality of second conductive lines formed in the second dielectric layers over the second substrate; a first conductive feature extending from the first semiconductor chip to one of the plurality of second conductive lines; and a first seal ring structure extending from the first semiconductor chip to the second semiconductor chip. |
| 地址 |
Hsin-Chu TW |
