SEMICONDUCTOR STRUCTURE FOR SUPPRESSING HOT CLUSTER

摘要

A semiconductor structure for suppressing a hot cluster is disclosed. An isolation well region which has an extension tip extending toward a substrate is formed in an epitaxial layer disposed on the substrate are of a first conductive type. A first element region and a second element region are disposed in the epitaxial layer to sandwich the isolation well region. The extension tip and the substrate together suppresses a leak current which forms a hot cluster and flows from the first element region via the extension tip to the second element region.

主权项

1. A semiconductor structure for suppressing a hot cluster, comprising:
an epitaxial layer disposed on a substrate; a shallow trench isolation disposed in said epitaxial layer; an isolation well region disposed in said epitaxial layer and surrounding said shallow trench, wherein said isolation well region has an extension tip extending toward said substrate, and said isolation well region and said substrate are of a first conductive type; a first element region which is of a second conductive type different from said first conductive type, disposed in said epitaxial layer and adjacent to said shallow trench isolation and comprises a first element; and a second element region which is of said second conductive type, disposed in said epitaxial layer and adjacent to said shallow trench isolation and comprises a second element so that said isolation well region is sandwiched between said first element region and said second element region, wherein said substrate and a regional isolation comprising said extension tip together suppresses a leak current which forms a hot cluster comprising said first element region and said second element region and flows from said first element region via said extension tip to said second element region.