FILM DEPOSITION USING SPATIAL ATOMIC LAYER DEPOSITION OR PULSED CHEMICAL VAPOR DEPOSITION
摘要
Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
申请公布号
WO2015103358(A1)
申请公布日期
2015.07.09
申请号
WO2014US72929
申请日期
2014.12.31
申请人
APPLIED MATERIALS, INC.
发明人
LEI, YU;GANDIKOTA, SRINIVAS;GANGULI, SESHADRI;ZHENG, BO;JAKKARAJU, RAJKUMAR;SALINAS, MARTIN JEFF;SCHMIEGE, BENJAMIN
