SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a trench-gate semiconductor device which can inhibit breaking of a gate insulation film caused by displacement current flowing into a protective diffusion layer on a trench bottom of a gate electrode at the time of turn-off.SOLUTION: A silicon carbide semiconductor device comprises: a gate electrode 7 which is formed in a trench 5 which pierces a base region 3 in a lattice shape and separates the base region 3 into a plurality of sections which are arranged in a matrix shape; a gate insulation film 6 formed on lateral faces and a bottom face of the gate electrode 7; a protective contact region 20 which is at least one section of the plurality of sections; and a second conductivity type protective diffusion layer 13 which is formed on a lower part of the gate insulation film 6 and in the protective contact region 20, in which a source electrode 9 pierces the base region 3 in the protective contact region and is connected to the protective diffusion layer 13 formed on the protective contact region 20.