SEMICONDUCTOR LASER DEVICE DESIGN METHOD, RAMAN AMPLIFIER DESIGN METHOD, SEMICONDUCTOR LASER DEVICE MANUFACTURING METHOD, SEMICONDUCTOR LASER DEVICE, RAMAN AMPLIFIER AND OPTICAL COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a design method of a semiconductor laser device which can inhibit induced Brillouin scattering in an optical fiber caused by laser beams output by a semiconductor laser device which is used for an excitation light source for Raman amplification.SOLUTION: In a semiconductor laser device design method, by adjusting a distance from output side reflection means 31 to second reflection means 28, reflectance of the output side reflection means 31 and reflectance of the second reflection means 28 to control an effective return light quantity to the semiconductor laser element 30, a LFF (Low Frequency Fluctuation) cycle of a semiconductor laser device 20 can be made to be equal to or less than 20 ns.