发明名称 |
NANOSTRUCTURES HAVING LOW DEFECT DENSITY AND METHODS OF FORMING THEREOF |
摘要 |
A method of forming nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm. |
申请公布号 |
US2015194316(A1) |
申请公布日期 |
2015.07.09 |
申请号 |
US201414151635 |
申请日期 |
2014.01.09 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sandhu Gurtej S. |
分类号 |
H01L21/308;H01L23/00 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a nanostructure, comprising:
forming a pattern of self-assembled nucleic acids on at least a portion of a substrate; and exposing the pattern of self-assembled nucleic acids on the at least a portion of a substrate to at least one repair enzyme to repair defects in the self-assembled nucleic acids. |
地址 |
Boise ID US |