发明名称 NANOSTRUCTURES HAVING LOW DEFECT DENSITY AND METHODS OF FORMING THEREOF
摘要 A method of forming nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.
申请公布号 US2015194316(A1) 申请公布日期 2015.07.09
申请号 US201414151635 申请日期 2014.01.09
申请人 Micron Technology, Inc. 发明人 Sandhu Gurtej S.
分类号 H01L21/308;H01L23/00 主分类号 H01L21/308
代理机构 代理人
主权项 1. A method of forming a nanostructure, comprising: forming a pattern of self-assembled nucleic acids on at least a portion of a substrate; and exposing the pattern of self-assembled nucleic acids on the at least a portion of a substrate to at least one repair enzyme to repair defects in the self-assembled nucleic acids.
地址 Boise ID US