INTERCONNECT AND METHOD OF FABRICATING THE SAME

摘要

Provided is a method of fabricating an interconnect including the following steps. A conductive plug and a dielectric layer are provided, wherein a surface of the conductive plug and the surface of the dielectric layer substantially form a planar surface. A chemical mechanical polishing process is performed to the planar surface, wherein a chemical removal rate of the dielectric layer is greater than a chemical removal rate of the conductive plug. A conductive line is formed to electrically connect the conductive plug.

主权项

1. A method of fabricating an interconnect, comprising:
providing a conductive plug and a dielectric layer, wherein a surface of the conductive plug and the surface of the dielectric layer substantially form a planar surface; performing a chemical mechanical polishing process to the planar surface, wherein a chemical removal rate of the dielectric layer is greater than a chemical removal rate of the conductive plug, wherein the conductive plug forms a protrusion beyond the dielectric layer after the chemical mechanical polishing process is performed, and the protrusion comprises a top surface and a sidewall; forming a conductive line on the conductive plug to electrically connect the conductive plug; and forming a barrier layer between the conductive plug and the conductive line.