METHOD FOR FORMING THIN CIGS FILMS FOR SOLAR CELLS AND DEVICE FOR THE IMPLEMENTATION THEREOF

摘要

The invention relates to a technique for forming thin semiconducting CIGS films for solar cells on sheet glass substrates, and to vacuum deposition devices for implementing said technique under industrial mass production conditions. The present invention solves the problem of creating a method for forming thin-film CIGS layers for solar cells on large-scale substrates which makes it possible, under mass production conditions, to obtain an optimum integral composition of the material, to ensure the efficient conversion of solar energy into electricity, and to provide a technique which can be reliably reproduced in mass production on large substrates, while at the same time reducing production costs. This problem is solved in that in a known method for forming thin CIGS films, material is applied in successive layers by reactive sputtering in elemental selenium vapour using consecutively arranged magnetron sputtering stations, wherein for the cathodes of the magnetron stations in the positions for the formation of odd-numbered layers, an alloy of Cu-In-Ga is used in which the atomic concentration ratios of Cu/(In+Ga) [Cu/III] and Ga/(In+Ga) [Ga/III] are selected in the ranges of [Cu/III] = 0.47 - 0.51 and [Ga/III] = 0.25 - 0.3, and for the cathodes of the magnetron stations in the positions for the formation of even-numbered layers, an alloy of Cu-Ga is used in which the atomic concentration ratios of Cu/Ga = 2.5 - 2.8. The method and the device also differ in other ways from the prior art.