| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor substrate manufacturing method which can form a high quality single crystal silicon carbide film having less crystal defect.SOLUTION: A semiconductor substrate comprises: a single crystal silicon 11; mask material 12 formed on a surface of the single crystal silicon 11 and having an opening 12h; a silicon carbide film 13 formed on a part exposed through the opening 12h of the single crystal silicon 11; and a single crystal silicon carbide film 14 formed to cover the silicon carbide film 13 and the mask material 12. Viscosity of the mask material 12 is 10Pa s or more to 10Pa s or less within a temperature range from 950°C or more to 1400°C or less. |
