| 发明名称 |
METHOD OF FABRICATING BUMP STRUCTURE AND BUMP STRUCTURE |
| 摘要 |
A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer. |
| 申请公布号 |
US2015194402(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201514662295 |
申请日期 |
2015.03.19 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU Chun-Lei;HO Ming-Che;CHENG Ming-Da;LIU Chung-Shi |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate; forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer; and initiating a removal process on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer. |
| 地址 |
Hsinchu TW |
