METHOD FOR THE PREVENTION OF SUSPENDED SILICON STRUCTURE ETCHING DURING REACTIVE ION ETCHING

摘要

The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.

主权项

1. A method of forming a device, comprising:
receiving a semiconductor substrate; forming a protective region on the substrate; forming a spacer layer over the protective region; patterning the spacer layer to leave the spacer layer at least partially around a perimeter of the protective region while exposing the protective region; forming a bulk silicon layer over the spacer layer and bonding the spacer layer to the bulk silicon layer, wherein an air gap is left between the protective region and bulk silicon layer; and etching the bulk silicon layer to form a recess which meets the air gap, wherein the etched bulk silicon layer includes a suspended body of bulk silicon bounded by a support structure and coupled thereto by support arms.