| 发明名称 |
AMPLIFIER |
| 摘要 |
An amplifier includes a first FET having a first back-gate end, a second FET having a second back-gate end, a third FET having a third back-gate end, a first power supply terminal configured to apply a voltage to the first back-gate end, a second power supply terminal configured to apply a voltage to the second back-gate end, and a third power supply terminal configured to apply a voltage to the third back-gate end. In the stated amplifier, the first through third power supply terminals are configured such that different voltages can be set to the first through third power supply terminals. |
| 申请公布号 |
US2015194935(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414569928 |
申请日期 |
2014.12.15 |
| 申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
KIM Ryangsu |
| 分类号 |
H03F1/02;H03F1/32;H03F3/193 |
主分类号 |
H03F1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An amplifier comprising:
a first FET including a first back-gate end; a second FET including a second back-gate end; a third FET including a third back-gate end; a first power supply terminal configured to apply a voltage to the first back-gate end; a second power supply terminal configured to apply a voltage to the second back-gate end; and a third power supply terminal configured to apply a voltage to the third back-gate end, wherein gate ends of the first through third FETs are connected in common with one another, source ends of the first through third FETs are connected in common with one another, drain ends of the first through third FETs are connected in common with one another, and the first through third power supply terminals are configured such that different voltages are set to the first through third power supply terminals. |
| 地址 |
Kyoto JP |
