发明名称 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING CAVITIES TO DISTRIBUTE CONDUCTIVE PATTERNING RESIDUE
摘要 Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.
申请公布号 US2015194599(A1) 申请公布日期 2015.07.09
申请号 US201414522865 申请日期 2014.10.24
申请人 Park Jongchul;Bae Byoungjae;Kim Inho;Kwon Shin;Noh Eunsun;Park Insun;Lee Sangmin 发明人 Park Jongchul;Bae Byoungjae;Kim Inho;Kwon Shin;Noh Eunsun;Park Insun;Lee Sangmin
分类号 H01L43/12;H01L43/08;H01L27/22;H01L43/02 主分类号 H01L43/12
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: forming a conductive layer on a substrate; forming an air gap between the conductive layer and the substrate; and patterning the conductive layer to expose the air gap.
地址 Seongnam-si KR