PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER

摘要

A spin transfer torque magnetic random access memory (STTMRAM) element comprises a reference layer, which can be a single layer structure or a synthetic multi-layer structure, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A tuning layer is formed on top of the free layer and a fixed layer is formed on top of the tuning layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the reference layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

主权项

1. A spin transfer torque magnetic random access memory (STTMRAM) element comprising:
a magnetic pinned layer having a first fixed magnetization direction substantially perpendicular to a layer plane thereof; a magnetic free layer separated from said magnetic pinned layer by a tuning layer and having a variable magnetization direction substantially perpendicular to a layer plane thereof; and a magnetic reference layer separated from said magnetic free layer by an insulating tunnel junction layer and having a second fixed magnetization direction substantially opposite to said first fixed magnetization direction provided in said magnetic pinned layer, wherein said tuning layer comprises at least one insulating layer and at least one conductive layer.