| 摘要 |
A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers. |
| 主权项 |
1. A light emitting device, comprising:
an optically permissive cover substrate; an optically transparent layer attached to a bottom surface of said optically transparent cover substrate, said optically transparent layer including an optically definable material; a semiconductor LED including a positively-doped region, an intrinsic region, and a negatively-doped region, wherein said intrinsic region is between said positively-doped region and said negatively-doped region, and a first surface of said semiconductor LED contacts a first portion of a bottom surface of said optically transparent layer; a carrier layer proximal to a second surface of said semiconductor LED, said first and second surfaces on opposing sides of said semiconductor LED; a passivation layer disposed on said carrier layer and on an exposed portion of said bottom surface of said optically transparent layer; a first electrical contact disposed in a first contact hole defined in said passivation layer, said carrier layer, and said semiconductor LED, said first electrical contact in electrical communication with said positively-doped region; and a second electrical contact disposed in a second contact hole defined in said passivation layer, said carrier layer, and said semiconductor LED, said second electrical contact in electrical communication with said negatively-doped region. |
