| 发明名称 |
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS |
| 摘要 |
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
| 申请公布号 |
US2015194521(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201514628989 |
申请日期 |
2015.02.23 |
| 申请人 |
Fairchild Semiconductor Corporation |
发明人 |
Yedinak Joseph A.;Challa Ashok;Kinzer Daniel M.;Probst Dean E.;Calafut Daniel |
| 分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a trench extending into a semiconductor region, the trench having a gate electrode and a shield electrode disposed therein; a mesa adjacent to the trench; and a gate runner disposed over the trench and making electrical contact with the gate electrode, and electrically isolated from mesa. |
| 地址 |
South Portland ME US |
