HIGH EFFICIENCY INDUCTIVELY COUPLED PLASMA SOURCE WITH CUSTOMIZED RF SHIELD FOR PLASMA PROFILE CONTROL

摘要

Apparatus for processing substrates are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a dielectric lid and an interior processing volume beneath the dielectric lid, a first RF coil to couple RF energy into the processing volume, and an RF shielded lid heater coupled to a top surface of the dielectric lid comprising an annular member, and a plurality of spokes, wherein each of the plurality of spokes includes one of (a) a first portion that extends downward from the annular and couples the annular member to a second portion of the spoke that extends radially inward, or (b) a first portion that extends radially outward from the annular member.

主权项

1. A plasma processing apparatus, comprising:
a process chamber having a dielectric lid and an interior processing volume beneath the dielectric lid; a first radio-frequency (RF) coil disposed above the dielectric lid to couple RF energy into the processing volume; and a RF shielded lid heater coupled to a top surface of the dielectric lid comprising:
an annular member, anda plurality of spokes, wherein each of the plurality of spokes includes one of (a) a first portion that extends downward from the annular and couples the annular member to a second portion of the spoke that extends radially inward, or (b) a first portion that extends radially outward from the annular member.